LPDDR4/x SDRAM Validation Results
Listed below are validation results from a small sample of LPDDR4/x SDRAMs tested on Intel client reference platforms (DRAM down testing). Intel is providing this information as a guide to memory compatibility with Intel reference platforms and in accordance with the Intel platform memory Plan of Record (POR). This testing is not intended to replace the normal OEM component qualification process. For test results on specific Intel motherboards, refer to Intel Client Customer Enabling support. For test results on OEM production motherboards, refer to the OEM’s list of qualified memory suppliers.
LPDDR4-3733/4266 (200 ball) tested on ATE at native frequency and downbinned to 2400 Mbps at the platform (1.1V).
| DRAMSupplier | DRAM Part Number | Rated Speedbin | PKG Size | Die per Ch | Ranks per Ch | PKGStacking | PKGWidth | Die Rev | Date Code |
| Micron* | MT53B256M32D1NP-053 WT:C | 3733 Mbps | 8 Gb (1 GB) | 4 Gb x16 | 1R | DDP | x32 | C | 1650 |
| Micron | MT53E512M32D2NP-046 WT:E | 4266 Mbps | 16 Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | E | 1828 |
| Micron | MT53E1G32D4NQ-046 WT:E | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 2R | QDP | x32 | E | 1912 |
| Samsung* | K4F8E3S4HD-MGCL | 4266 Mbps | 8 Gb (1 GB) | 4 Gb x16 | 1R | DDP | x32 | D | 1919 |
| Samsung | K4F6E3S4HM-MGCJ | 3733 Mbps | 16 Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | M | 1734 |
| Samsung | K4FBE3D4HM-MGCJ | 3733 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 2R | QDP | x32 | M | 1737 |
| SK Hynix* | H9HCNNN8KUMLHR-NME | 3733 Mbps | 8 Gb (1 GB) | 4 Gb x16 | 1R | DDP | x32 | M | 1835 |
| SK Hynix | H9HCNNNBPUMLHR-NME | 3733 Mbps | 16 Gb (2 GB) | 4 Gb x16 | 2R | QDP | x32 | M | 1834 |
| Nanya* | NT6AN256T32AV-J2 | 3733 Mbps | 8 Gb (1 GB) | 4 Gb x16 | 1R | DDP | x32 | A | 1947 |
| Nanya | NT6AN512T32AV-J2 | 3733 Mbps | 16 Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | A | 2021 |
HK PURIS CO., LTD. https://www.puris.net
LPDDR4-3733/4266 (200 ball) tested on ATE at native frequency and downbinned to 3733 Mbps at the platform (1.1V).
| DRAMSupplier | DRAM Part Number | Rated Speedbin | PKG Size | Die per Ch | Ranks per Ch | PKGStacking | PKGWidth | Die Rev | Date Code |
| Micron | MT53E1G32D4NQ-046 WT:E | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 2R | QDP | x32 | E | 1912 |
| Micron | MT53E512M32D2NP-046 WT:E | 4266 Mbps | 16 Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | E | 1828 |
| Samsung | K4F6E3S4HM-MGCJ | 3733 Mbps | 16 Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | M | 1734 |
| SK hynix | H9HCNNNBKUMLXR-NEE | 4266 Mbps | 16Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | B | 2111 |
HK PURIS CO., LTD. https://www.puris.net
LPDDR4x-3733/4266 (200 ball) tested on ATE at native frequency and downbinned to 3733 Mbps at the platform (0.6V).
| DRAMSupplier | DRAM Part Number | Rated Speedbin | PKG Size | Die per Ch | Ranks per Ch | PKGStacking | PKGWidth | Die Rev | Date Code |
| Micron | MT53E512M32D2NP-046 WT:E | 4266 Mbps | 16 Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | E | 1828 |
| Micron | MT53E1G32D4NQ-046 WT:E | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 2R | QDP | x32 | E | 1744 |
| Micron | MT53E512M32D2NP-046 WT:F | 4266 Mbps | 16 Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | F | 1926 |
| Micron | MT53E1G32D4NQ-046 WT:F | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 2R | QDP | x32 | F | 2008 |
| Micron | MT53E2G32D8QD-046 WT:E | 4266 Mbps | 64 Gb (8 GB) | 8 Gb x8 | 2R | ODP | x32 | E | 1740 |
| Samsung | K4U6E3S4AA-MGCL | 3733 Mbps | 16 Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | A | 1901 |
| Samsung | K4UBE3D4AA-MGCL | 3733 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 2R | QDP | x32 | A | 1922 |
| SK Hynix | H9HCNNNBKMALHR-NEE | 4266 Mbps | 16 Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | A | 1836 |
| SK Hynix | H9HCNNNCPMALHR-NEE | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 2R | QDP | x32 | A | 1836 |
| SK Hynix | H9HCNNNFAMALTR-NME | 3733 Mbps | 64 Gb (8 GB) | 8 Gb x8 | 2R | ODP | x32 | A | 1823 |
| SK Hynix | H9HCNNNBKMMLXR-NEE | 4266 Mbps | 16 Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | M | 2027 |
| SK Hynix | H9HCNNNCPMMLXR-NEE | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 2R | QDP | x32 | M | 2025 |
| SK Hynix | H9HCNNNFAMMLXR-NEE | 4266 Mbps | 64 Gb (8 GB) | 8 Gb x8 | 2R | ODP | x32 | M | 2025 |
| Nanya | NT6AP256T32AV-J1 | 4266 Mbps | 8 Gb (1 GB) | 4 Gb x16 | 1R | DDP | x32 | A | 2032 |
HK PURIS CO., LTD. https://www.puris.net
LPDDR4x-4266 (200 ball) tested on ATE and platform at native frequency (0.6V).
| DRAMSupplier | DRAM Part Number | Rated Speedbin | PKG Size | Die per Ch | Ranks per Ch | PKGStacking | PKGWidth | Die Rev | Date Code |
| Micron | MT53E512M32D2NP-046 WT:E | 4266 Mbps | 16 Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | E | 1938 |
| Micron | MT53E512M32D2NP-046 WT:F | 4266 Mbps | 16 Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | F | 1926 |
| Micron | MT53E1G32D4NQ-046 WT:E | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 2R | QDP | x32 | E | 1942 |
| Micron | MT53E1G32D4NQ-046 WT:F | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 2R | QDP | x32 | F | 2008 |
| Micron | MT53E1G32D2NP-046 WT:A | 4266 Mbps | 32 Gb (4 GB) | 16 Gb x16 | 1R | DDP | x32 | A | 2008 |
| Micron | MT53E2G32D4NQ-046 WT:A | 4266 Mbps | 64 Gb (8 GB) | 16 Gb x16 | 2R | QDP | x32 | A | 1938 |
| Micron | MT53E2G32D8QD-046 WT:E | 4266 Mbps | 64 Gb (8 GB) | 8 Gb x8 | 2R | ODP | x32 | E | 1928 |
| Micron | MT53E512M32D1NP-046 WT:B | 4266 Mbps | 16 Gb (2 GB) | 16 Gb x16 | 1R | SDP | x32 | B | 2112 |
| Micron | MT53E1G32D2NP-046 WT:B | 4266 Mbps | 32 Gb (4 GB) | 16 Gb x16 | 1R | DDP | x32 | B | 2114 |
| Micron | MT53E2G32D4NQ-046 WT:C | 4266 Mbps | 64 Gb (8 GB) | 16 Gb x16 | 2R | QDP | x32 | C | 2120 |
| Samsung | K4U6E3S4AA-MGCR | 4266 Mbps | 16 Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | A | 2019 |
| Samsung | K4UBE3D4AA-MGCR | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 2R | QDP | x32 | A | 2019 |
| Samsung | K4UBE3S4AM-MGCL | 4266 Mbps | 32 Gb (4 GB) | 16 Gb x16 | 1R | DDP | x32 | M | 2043 |
| SK Hynix | H9HCNNNBKMMLXR-NEE | 4266 Mbps | 16 Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | M | 2027 |
| SK Hynix | H9HCNNNCPMMLXR-NEE | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 2R | QDP | x32 | M | 2025 |
| SK Hynix | H9HCNNNFAMMLXR-NEE | 4266 Mbps | 64 Gb (8 GB) | 8 Gb x8 | 2R | ODP | x32 | M | 2025 |
| SK Hynix | H54G46CYRBX267N | 4266 Mbps | 16 Gb (2 GB) | 8 Gb x16 | 1R | DDP | x32 | C | 2123 |
| SK Hynix | H54G56CYRBX247N | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 2R | QDP | x32 | C | 2119 |
| SK Hynix | H54G68CYRBX248 | 4266 Mbps | 64 Gb (8 GB) | 8 Gb x8 | 2R | ODP | x32 | C | 2119 |
HK PURIS CO., LTD. https://www.puris.net
LPDDR4x-3733/4266 (432 ball) tested on ATE at native frequency (0.6V).
| DRAMSupplier | DRAMPart Number | Rated Speedbin | PKG Size | Die per Ch | Ranks Per Ch | PKGStacking | PKGWidth | Die Rev | Date Code |
| Micron | MT53E512M64D4NW-046 WT:E | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 1R | QDP | x64 | E | 1742 |
| Micron | MT53E1G64D8NW-046 WT:E | 4266 Mbps | 64 Gb (8 GB) | 8 Gb x16 | 2R | ODP | x64 | E | 1748 |
| Micron | MT53D512M64D4NW-046 WT:F | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 1R | QDP | x64 | F | 1944 |
| Micron | MT53D1G64D4NW-046 WT:A | 4266 Mbps | 64 Gb (8 GB) | 16 Gb x16 | 1R | QDP | x64 | A | 2002 |
| Micron | MT53E512M64D2NW-046 WT:B | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 1R | QDP | x64 | B | 2126 |
| Samsung | K3UH5H50AM-JGCL | 3733 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 1R | QDP | x64 | A | 1907 |
| Samsung | K3UH7H70AM-JGCL | 3733 Mbps | 64 Gb (8 GB) | 8 Gb x16 | 2R | ODP | x64 | A | 1922 |
| Samsung | K3UH5H50AM-JGCR | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 1R | QDP | x64 | A | 2022 |
| Samsung | K3UH7H70AM-JGCR | 4266 Mbps | 64 Gb (8 GB) | 8 Gb x16 | 2R | ODP | x64 | A | 2022 |
| SK Hynix | H9HCNNNFBMBLPR-NEE | 4266 Mbps | 64 Gb (8 GB) | 8 Gb x16 | 2R | ODP | x64 | B | 1944 |
| SK Hynix | H9HCNNNCRMBLPR-NEE | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 1R | QDP | x64 | B | 2026 |
HK PURIS CO., LTD. https://www.puris.net
LPDDR4x-4266 (556 ball) tested on ATE and platform at native frequency (0.6V).
| DRAMSupplier | DRAMPart Number | Rated Speedbin | PKG Size | Die per Ch | Ranks per Ch | PKGStacking | PKGWidth | Die Rev | Date Code |
| Micron | MT53D1G64D8SQ-046 WT:E | 4266 Mbps | 64 Gb (8 GB) | 8 Gb x16 | 2R | ODP | x64 | E | 1934 |
| Micron | MT53D512M64D4RQ-046 WT:E | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 1R | QDP | x64 | E | 1850 |
| Micron | MT53E1G64D4SQ-046 WT:A | 4266 Mbps | 64 Gb (8 GB) | 16 Gb x16 | 1R | QDP | x64 | A | 1948 |
| Micron | MT53E512M64D4RQ-046 WT:F | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 1R | QDP | x64 | F | 2022 |
| Micron | MT53E1G64D8SQ-046 WT:F | 4266 Mbps | 64 Gb (8 GB) | 8 Gb x16 | 2R | ODP | x64 | F | 2024 |
| SK Hynix | H9HKNNNCRMBVAR-NEH | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 1R | QDP | x64 | B | 2001 |
| SK Hynix | H9HKNNNFBMAVAR-NEH | 4266 Mbps | 64 Gb (8 GB) | 8 Gb x16 | 2R | ODP | x64 | A | 2031 |
| Samsung | K3UH5H50AM-AGCL | 4266 Mbps | 32 Gb (4 GB) | 8 Gb x16 | 1R | QDP | x64 | A | 2016 |
